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The key technology of high power laser diode

Time:2024-11-18 Views:93
Structural design optimization: The three basic principles of semiconductor lasers are: electrical injection and confinement, electrical-optical conversion, optical confinement and output, which correspond to electrical injection design, quantum well design, and optical field design of the waveguide structure, respectively. Optimizing the structure of quantum wells, quantum wires, quantum dots, and photonic crystals has promoted the continuous improvement of laser technology, making the output power and electro-optical conversion efficiency of lasers higher and higher, beam quality getting better and better, and higher reliability .
High-quality epitaxial material growth technology: Semiconductor laser epitaxial material growth technology is the core of semiconductor laser development. It mainly optimizes the doping curve to reduce the overlap between the optical field and the heavily doped region,thereby reducing free carrier absorption loss and improving the conversion efficiency of the device.
Cavity surface treatment technology: Through various cavity surface passivation and coating technology, reduce or eliminate cavity surface defects and oxidation, reduce cavity surface light absorption, increase cavity surface COMD value, and achieve high peak power output.
Integrated packaging technology: The research on the key technology of high-power semiconductor laser packaging is to start from the aspects of heat, packaging materials and stress, to solve the packaging design of thermal management and thermal stress, and to achieve a technological breakthrough in the development of direct semiconductor lasers to high power, high brightness and high reliability.
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